How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
Digi-Key ElectronicsのGaN電源製品リソース | DigiKey
Electronics | Free Full-Text | Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability
GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
GaN power devices, Part 1: Principles
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN | Nexperia
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
High-speed GaN FET driver switches at 40 MHz - Power Electronic Tips
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
新しい耐圧200 VのeGaNデバイスは、成熟したシリコン・パワーMOSFETに比べて性能が2倍です
GaN Power HEMT > 650V VS SiC MOSFET- Power Electronics News
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
GAN063-650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET | Nexperia
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN® FET Family | Business Wire
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
Peregrine Semiconductor Unveils the World's Fastest GaN FET Driver - pSemi
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
Cross-sectional schematic of normally-off GaN MOSFET with p-GaN... | Download Scientific Diagram
Model for Gate Capacitance of trench GaN Mosfet
