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低コストで高性能な高周波トランジスタを製造できるGaN積層構造を開発――5Gの普及に貢献 エア・ウォーター - fabcross for エンジニア
低コストで高性能な高周波トランジスタを製造できるGaN積層構造を開発――5Gの普及に貢献 エア・ウォーター - fabcross for エンジニア

Compound Semiconductors : What Are “SiC” and “GaN”? |Sanken Electric
Compound Semiconductors : What Are “SiC” and “GaN”? |Sanken Electric

Power GaN and SiC: Entering a New Era - EE Times Asia
Power GaN and SiC: Entering a New Era - EE Times Asia

GaN:電力密度の限界を押し上げると同時に、効率も向上 | TI.com
GaN:電力密度の限界を押し上げると同時に、効率も向上 | TI.com

a) Cross sectional schematic drawing of the GaN-on-SiC samples. (b)... |  Download Scientific Diagram
a) Cross sectional schematic drawing of the GaN-on-SiC samples. (b)... | Download Scientific Diagram

Gallium Nitride (GaN) versus Silicon Carbide (SiC)
Gallium Nitride (GaN) versus Silicon Carbide (SiC)

Design Considerations with GaN & SiC - Power Electronics News
Design Considerations with GaN & SiC - Power Electronics News

GaN on SiCが拡大する高周波デバイス市場、 残る課題はGaN on GaNで解決する可能性 | 日経クロステック(xTECH)
GaN on SiCが拡大する高周波デバイス市場、 残る課題はGaN on GaNで解決する可能性 | 日経クロステック(xTECH)

Market analysis: "Who really requires GaN & SiC power devices ?"
Market analysis: "Who really requires GaN & SiC power devices ?"

産総研:GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
産総研:GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証

Practical considerations when comparing SiC and GaN in power applications -  Elettronica Plus
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus

Benefits of GaN and SiC in NextGen OBCs- Power Electronics News
Benefits of GaN and SiC in NextGen OBCs- Power Electronics News

Qorvo's GaN-on-SiC Advantage - Qorvo
Qorvo's GaN-on-SiC Advantage - Qorvo

産総研:GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
産総研:GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証

A Week of GaN: 3 MMICs Target Ka-band, Reduced Area, and 5G Base Stations -  News
A Week of GaN: 3 MMICs Target Ka-band, Reduced Area, and 5G Base Stations - News

第2回:GaNの商用化が加速、SiCはやや足踏み (3/4) | 連載02 省エネを創り出すパワー半導体 | Telescope Magazine
第2回:GaNの商用化が加速、SiCはやや足踏み (3/4) | 連載02 省エネを創り出すパワー半導体 | Telescope Magazine

Next-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism - News
Next-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism - News

Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices -  ScienceDirect
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices - ScienceDirect

SiCおよびGaN半導体 | DigiKey
SiCおよびGaN半導体 | DigiKey

ハイブリッド型トランジスタ、GaNとSiCを一体化:産総研が作製、動作実証にも成功 - EE Times Japan
ハイブリッド型トランジスタ、GaNとSiCを一体化:産総研が作製、動作実証にも成功 - EE Times Japan

Compound Semiconductors : What Are “SiC” and “GaN”? |Sanken Electric
Compound Semiconductors : What Are “SiC” and “GaN”? |Sanken Electric

GaN Technology - GaN-on-Si - Transphorm
GaN Technology - GaN-on-Si - Transphorm

What makes SiC and GaN suitable for high-power designs - Planet Analog
What makes SiC and GaN suitable for high-power designs - Planet Analog

PDF] GaN on Diamond vs . GaN on SiC HEMT and MMIC Performance | Semantic  Scholar
PDF] GaN on Diamond vs . GaN on SiC HEMT and MMIC Performance | Semantic Scholar