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Toshiba's third-generation SiC MOS to improve performance by 80%, to be mass produced in late August - TechGoing
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Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability | Business Wire
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Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment | Business Wire
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Toshiba's New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss | Toshiba Electronic Devices & Storage Corporation | Americas – United States
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Toshiba's New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss | Toshiba Electronic Devices & Storage Corporation | Americas – United States
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Features of SiC MOSFET Modules | Toshiba Electronic Devices & Storage Corporation | Americas – United States
![Toshiba's New Gate Insulation Film Process Technology Cuts Resistance in SiC -MOSFETs | Corporate Research & Development Center | Toshiba Toshiba's New Gate Insulation Film Process Technology Cuts Resistance in SiC -MOSFETs | Corporate Research & Development Center | Toshiba](https://www.global.toshiba/content/dam/toshiba/migration/corp/researchDevelopAssets/rdc/rd/detail_e/images/1709_01_1.jpg)
Toshiba's New Gate Insulation Film Process Technology Cuts Resistance in SiC -MOSFETs | Corporate Research & Development Center | Toshiba
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Toshiba launches its 3rd generation SiC MOSFETs that contribute to the higher efficiency of industrial equipment - ANTARA News
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Features of Toshiba SiC MOSFET Modules | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
Toshiba's Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules Will Contribute to Smaller, More Efficient Industrial Equipment
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Toshiba launches third generation 650V silicon carbide (SiC) MOSFETs | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
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